@inproceedings{PCM:MICRO10:ECP,
 author = {Schechter, Stuart and Loh, Gabriel H. and Straus, Karin and Burger, Doug},
 title = {{Use ECP, not ECC, for hard failures in resistive memories}},
 booktitle = {Proceedings of the International Symposium on Computer Architecture},
 year = {2010},
 pages = {141-152}
}

@inproceedings{PCM:ISCA09:Zhou,
 author = {Zhou, Ping and Zhao, Bo and Yang, Jun and Zhang, Youtao},
 title = {{A durable and energy efficient main memory using phase change memory technology}},
 booktitle = {Proceedings of the International Symposium on Computer Architecture},
 year = {2009},
 pages = {14-23}
}

@inproceedings{PCM:ISCA09:Qureshi,
 author = {Qureshi, Moinuddin K. and Srinivasan, Vijayalakshmi and Rivers, Jude A.},
 title = {{Scalable high performance main memory system using phase-change memory technology}},
 booktitle = {Proceedings of the International Symposium on Computer Architecture},
 year = {2009},
 pages = {24-33}
}

@inproceedings{PCM:Chung,
   Author = {Chung Lam},
   Title = {Cell design considerations for phase change memory as a universal memory},
   BookTitle = {Proceedings of the International Symposium on VLSI Technology, Systems and Applications},
   Pages = {132-133},
   Year = {2008} }

@article{PCM:DaeHwan,
   Author = {Dae-Hwan Kang and Dong-Ho Ahn and Ki-Bum Kim and Webb, J. F. and Kyung-Woo Yi},
   Title = {{One-dimensional heat conduction model for an electrical phase change random access memory device with an 8F}$^2${ memory cell (F=}$0.15\mu m$)},
   Journal = {Journal of Applied Physics},
   Volume = {94},
   Number = {5},
   Pages = {3536-3542},
   Year = {2003} }

@article{PCM:JAP91:Yamada,
   Author = {N. Yamada and E. Ohno and K. Nishiuchi and N. Akahira},
   Title = {{Rapid phase transitions of GeTe-Sb}$_2${Te}$_3${ pseudobinary amorphous thin films for an optical disk memory}},
   Journal = {Journal of Applied Physics},
   Volume = {69},
   Number = {5},
   Pages = {2849-2856},
   Year = {1991} }

@article{PCM:IBMJ08:Raoux,
    Author = {S. Raoux and G. W. Burr and M. J. Breitwisch and C. T. Rettner and others},
    Title = {Phase-change random access memory: A scalable technology},
    Journal = {IBM Journal of Research and Development},
    Volume = {52},
    Number = {4/5},
    Year = {2008}
}

@article{PCM:IBMSCM,
    Author = {G. W. Burr and B. N. Kurdi and J. C. Scott and C. H. Lam and others},
    Title = {Overview of Candidate Device Technologies for Storage-Class Memory},
    Journal = {IBM Journal of Research and Development},
    Volume = {52},
    Number = {4/5},
    Year = {2008} }

@inproceedings{PCM:ISSCC07:Hanzawa,
   Author = {Hanzawa, S. and Kitai, N. and Osada, K. and Kotabe, A. and others},
   Title = {{A 512kB embedded phase change memory with 416kB/s write throughput at 100}$\mu${A cell write current}},
   booktitle = {Proceedings of the International Solid-State Circuits Conference},
   Pages = {474-616},
   Year = {2007}
}


@inproceedings{PCM:Hitachi2005,
   Author = {Matsuzaki, N. and Kurotsuchi, K. and Matsui, Y. and Tonomura, O. and others},
   Title = {Oxygen-Doped {GeSbTe} Phase-Change Memory Cells Featuring {1.5V/100}$\mu${A} Standard 0.13$\mu$m {CMOS} Operations},
   booktitle = {Proceedings of the IEEE International Electron Devices Meeting},
   Pages = {738-741},
   Year = {2005} }

@inproceedings{PCM:IEDM06:Oh,
   Author = {Oh, J. H. and Park, J. H. and Lim, Y. S. and Lim, H. S. and others},
   Title = {Full Integration of Highly Manufacturable {512Mb} {PRAM} based on 90nm Technology},
   BookTitle = {Proceedings of the International Electron Devices Meeting},
   Pages = {49-52},
   Year = {2006} }

@inproceedings{PCM:SVLSI04:Pellizzer,
   Author = {Pellizzer, F. and Pirovano, A. and Ottogalli, F. and Magistretti, M. and others},
   Title = {Novel $\mu${Trench phase-change memory cell for embedded and stand-alone non-volatile memory applications}},
   BookTitle = {Proceedings of the International Symposium on VLSI Technology},
   Pages = {18-19},
   Year = {2004}
}

@inproceedings{PCM:IEDM03:Pirovano,
   Author = {Pirovano, A. and Lacaita, A. L. and Benvenuti, A. and Pellizzer, F. and others},
   Title = {Scaling analysis of phase-change memory technology},
   BookTitle = {Proceedings of the International Electron Devices Meeting},
   Pages = {29.6.1-29.6.4},
   Year = {2003}
}

@inproceedings{PCM:scale1,
   Author = {Raoux, S. and Rettner, C. T. and Yi-Chou, Chen and Jordan-Sweet, J. and others},
   Title = {Scaling Properties of Phase Change Materials},
   BookTitle = {Proceedings of the Non-Volatile Memory Technology Symposium},
   Pages = {30-35},
   Year = {2007}
}

@inproceedings{PCM:scale,
   Author = {Sang-Bum Kim and Wong, H.-S. P.},
   Title = {Generalized Phase Change Memory Scaling Rule Analysis},
   BookTitle = {Proceedings of the IEEE Non-Volatile Semiconductor Memory Workshop},
   Pages = {92-94},
   Year = {2006}
}


@inproceedings{PCM:Diode,
   Author = {Yuan Zhang and Sang-Bum Kim and McVittie, J. P. and Jagannathan, H. and others},
   Title = {An Integrated Phase Change Memory Cell With {Ge} Nanowire Diode for Cross-Point Memory},
   BookTitle = {Proceedings of the IEEE Symposium on VLSI Technology},
   Pages = {98-99},
   Year = {2007}
}



@misc{PCM:ITRS,
    Author = {{International Technology Roadmap for Semiconductors}},
    Title = {{Process Integration, Devices, and Structures 2007 Edition}},
    Note = {\url{http://www.itrs.net/}}
}

@inproceedings{PCM:Samsung2006,
   Author = {Sangbeom Kang and Woo-Yeong Cho and Beak-Hyung Cho and Kwang-Jin Lee and others},
   Title = {A 0.1$\mu$m {1.8V} {256Mb} {66MHz} Synchronous Burst {PRAM}},
   BookTitle = {Proceedings of the IEEE International Solid-State Circuits Conference},
   Pages = {487-496},
   Year = {2006}
}
   
@article{PCM:JSSC07:Kang, 
	author={Kang, S. and Cho, W. Y. and Cho, B.-H. and Lee, K.-J. and others}, 
	journal={IEEE Journal of Solid-State Circuits},
	title={{A 0.1}$\mu${m 1.8V 256Mb phase-change random access memory (PRAM) with 66MHz synchronous burst-read operation}}, 
	year={2007},
	volume={42},
	number={1},
	pages={210-218}
}

@inproceedings{PCM:status,
   Author = {Atwood, G. and Bez, R.},
   Title = {Current Status of Chalcogenide Phase Change Memory},
   BookTitle = {Proceedings of the Device Research Conference},
   Volume = {1},
   Pages = {29-33},
   Year = {2005}
}

@article{PCM:PTM,
   Author = {Zhao, W. and Cao, Y.},
   Title = {New Generation of Predictive Technology Model for Sub-45nm Early Design Exploration},
   Journal = {IEEE Transactions on Electron Devices},
   Volume = {53},
   Number = {11},
   Pages = {2816-2823},
   Year = {2006}
}

@inproceedings{PCM:BJT,
   Author = {Bedeschi, F. and Bonizzoni, E. and Casagrande, G. and Gastaldi, R. and others},
   Title = {{SET} and {RESET} Pulse Characterization in {BJT}-Selected Phase-Change Memories},
   BookTitle = {Proceedings of the IEEE International Symposium on Circuits and Systems},
   Pages = {1270-1273},
   Year = {2005}
}

@article{PCM:JSSC06:Oh,
   author = {Hyung-Rok Oh and Beak-Hyung Cho and Woo-Yeong Cho and Sangbeom Kang and others},
   Title = {Enhanced write performance of a {64-Mb} phase-change random access memory},
   Journal = {IEEE Journal of Solid-State Circuits},
   Volume = {41},
   Number = {1},
   Pages = {122-126},
   Year = {2006}
}

@misc{DRAM:power,
    Author = {{Micron}},
    Title = {{System Power Calculator}},
    Note = {\url{http://www.micron.com/support/part_info/powercalc.aspx}}
}

@misc{iPhone,
    Author = {{Apple}},
    Title = {{iPhone Technical Specification}},
    Note = {\url{http://www.apple.com/iphone/specs.html}}
}

@inproceedings{PCM:Microsoft,
    author = {Benjamin C. Lee and Engin Ipek and Onur Mutlu and Doug Burger},
    title = {Architecting Phase Change Memory as a Scalable {DRAM} Alternative},
    booktitle= {Proceedings of the International Symposium on Computer Architecture},
    Pages = {2-13},
    year ={2009}
}

@inproceedings{PCM:IBM,
    author={Moinuddin K. Qureshi and Viji Srinivasan and Jude A. Rivers},
    title={Scalable High Performance Main Memory System Using Phase-Change Memory Technology},
    booktitle={Proceedings of the International Symposium on Computer Architecture},
    Pages = {24-33},
    year={2009}
}

@inproceedings{PCM:XWU,
    author={Xiaoxia Wu and Jian Li and Lixin Zhang and Evan Speight and Ram Rajamony and Yuan Xie},
    title={Hybrid Cache Architecture with Disparate Memory Technologies},
    booktitle={Proceedings of the International Symposium on Computer Architecture},
    Pages = {34-45},
    year={2009}
}

@inproceedings{PCM:IEDM04:Anh,
   author = {Ahn, S. J. and Song, Y. J. and Jeong, C. W. and Shin, J. M. and others},
   title = {Highly manufacturable high density phase change memory of {64Mb} and beyond},
   booktitle = {Proceedings of the International Electron Devices Meeting},
   pages = {907-910},
   year = {2004}
}

@article{PCM:JSSC08:Lee,
   Author = {Lee, Kwang-Jin and Cho, Beak-Hyung and Cho, Woo-Yeong and Kang, Sang-Beom and others },
   Title = {A 90nm {1.8V} {512Mb} diode-switch {PRAM} with {266MB/s} read throughput},
   Journal = {IEEE Journal of Solid-State Circuits},
   Volume = {43},
   Number = {1},
   Pages = {150-162},
   Year = {2008}
}

@article{DRAM:DRAMsim,
   author = {Wang, David and Ganesh, Brinda and Tuaycharoen, Nuengwong and Baynes, Katie and Jaleel, Aamer and others },
   title = {{DRAMsim}: A Memory-System Simulator},
   journal = {SIGARCH Computer Architecture News},
   volume = {33},
   number = {4},
   pages = {100-107},
   year = {2005}
}

@inproceedings{PCRAM:VLSIT09,
   author = {Sasago Yoshitaka and Kinoshita Masaharu and Morikawa Takahiro and Kurotsuchi Kenzo and others},
   title = {Cross-point phase change memory with {4F}$^2$ cell size driven by low-contact-resistivity poly-{Si} diode},
   booktitle = {Proceedings of the Symposium on VLSI Technology},
   pages = {24-25},
   year = {2009}
}

@inproceedings{PCM:IEDM09:Stackable,
   author = {Kau, DerChang and Tang, S. and Karpov, I. V. and Dodge, R. and others},
   title = {A stackable cross point Phase Change Memory},
   booktitle = {Proceedings of the IEEE International Electron Devices Meeting},
   pages = {27.1.1-27.1.4},
   year = {2009}
}

@article{PCM:review,
  author = {Geoffrey W. Burr and Matthew J. Breitwisch and Michele Franceschini and Davide Garetto and others},
  title = {Phase change memory technology},
  journal = {Journal of Vacuum Science \& Technology B},
  volume = {28},
  number = {2},
  pages = {223-262},
  year = {2010}
}
